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N-CHANNEL 150V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA TYPE STS5N150
s s s
STS5N150
VDSS 150 V
RDS(on) <0.06 Ω
ID 5A
TYPICAL RDS(on) = 0.045 Ω EXTREMELY HIGH dv/dt CAPABILITY EXTREMELY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
STS5N150 Datasheet
