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STT13005FP - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Key Features

  • High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STT13005FP High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications ■ ■ Electronic ballast for fluorescent lighting Flyback and forward single transistor low power converters 3 2 1 SOT-32FP Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram Table 1.