STTA312B Datasheet | STMicroelectronics

® TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) Features AND BENEFITS SPECIFICTO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY VERY LOW OVERALL POWER LOSSES AND PARTICULARY LOW FORWARD VOLTAGE HIGHFREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY 3A 1200 V 65 ns 1.7 V A NC DPAK DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mode” operations. They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitablefor the secondaryof SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5k Hz square tp = 10ms sinusoidal Value 1200 1200 6 35 25 - 65 to + 150 125 Unit V V A A A °C °C TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4A 1/8 THERMAL AND POWER DATA Symbol Rth (j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 3A, δ = 0.5 Tc = 80°C Tc = 76°C Tests conditions Value 6.5 6.7 7.5 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF - - IR - Vto rd Test pulses : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance - tp = 380 µs, δ < 2% - - tp = 5 ms , δ < 2% Tests conditions IF = 3 A IF = 3 A VR = 0.8 X VRRM Ip < 3.IAV Tj = 25°C...