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STTH112U Datasheet HIGH VOLTAGE ULTRAFAST RECTIFIER

Manufacturer: STMicroelectronics

Overview: ® STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF.

Download the STTH112U datasheet PDF. This datasheet also includes the STTH112 variant, as both parts are published together in a single manufacturer document.

General Description

The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications.

ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 85°C Tl = 115°C Tl = 125°C IFSM Forward surge current t = 8.3 ms SMA STTH112A SMB STTH112U Value 1200 850 δ =0.5 δ =0.5 δ =0.5 DO-41 SMA SMB DO-41 SMA SMB 20 18 1 Unit V V A A Tstg Tj Storage temperature range Maximum operating junction temperature - 50 + 175 + 175 °C °C January 2003 - Ed: 2 1/6 STTH112/A/U THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter L = 10 mm DO-41 SMA SMB Rth (j-a) Junction to ambient L = 10 mm DO-41 Value 45 30 25 110 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Tests conditions VR = 1200V Tj = 25°C Tj = 125°C VF Forward voltage drop IF = 1 A Tj = 25°C Tj = 125°C To evaluate the maximum conduction losses use the following equation : P = 1.35 x IF(AV) + 0.3 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25°C Tj = 25°C Min.

Typ.

Key Features

  • s s 1A 1200 V 175 °C 1.65 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH112.