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STTH2L06
High efficiency ultrafast diode
Features
■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature
Description
The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
A
K
DO-41 STTH2L06
SMA STTH2L06A
SMB STTH2L06U
Table 1. Device summary Symbol
IF(AV) VRRM
Tj VF(typ) trr (max)
Value 2A
600 V 175 °C 0.85 V 60 ns
October 2009
Doc ID10758 Rev 2
1/9
www.st.com
9
Characteristics
1
Characteristics
STTH2L06
Table 2.
STTH2L06 Datasheet
