STTH30R04 Datasheet | STMicroelectronics

Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr 30 A 400 V 175° C 0.97 V 24 ns Features and benefits - - - - - - TO-220AC STTH30R04D DO-247 STTH30R04W Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses High junction temperature Insulated package: DOP3I - Electrical insulation = 2500 VRMS Package capacitance = 12 p F .. D2PAK STTH30R04G DOP3I STTH30R04PI Note: D2PAK - 2 anode terminals must be shorted on board. Description The promise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Table 1. Symbol VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Order codes Part Number STTH30R04D STTH30R04G STTH30R04G-TR STTH30R04W STTH30R04PI Marking STTH30R04D STTH30R04G STTH30R04G STTH30R04W STTH30R04PI Absolute ratings (limiting values at 25° C, unless otherwise specified) Parameter Value 400 50 TO-220AC / DO-247 / D DOP3I tp = 10 µs, F = 1 k Hz 2PAK Unit V A A A A °C °C Tc = 120° C Tc = 90° C 30 500 300 -65 to +175 -40 to +175 Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature range March 2007 Rev...