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STV160NF02LA - N-channel Power MOSFET

Description

The STV160NF02LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design.

The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics.

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www.DataSheet4U.com N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET™ POWER MOSFET TYPE STV160NF02LA s s s s s s s STV160NF02LA VDSS 20 V RDS(on) < 0.0027 Ω ID 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE 10 1 PowerSO-10 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The STV160NF02LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics.
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