STV160NF02LA Datasheet | STMicroelectronics

.. N-CHANNEL 20V - 0.0018Ω - 160A Power SO-10 STrip FET™ POWER MOSFET TYPE STV160NF02LA s s s s s s s VDSS 20 V RDS(on) < 0.0027 Ω ID 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE Power SO-10 PACKAGE Power SO-10 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The STV160NF02LA represents the second generation of Application Specific STMicroelectronics well established STrip FET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELE AND VRMs DCDC CONVERTERS...