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STV60NE06-16
N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10 STripFET™ POWER MOSFET
PRELIMINARY DATA
T YPE STV60NE06-16
s s s s s
V DSS 60 V
R DS(on) < 0.016 Ω
ID 60 A
TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION
10
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.