Datasheet Summary
N-CHANNEL 700V
- 0.58 Ω
- 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW10NC70Z s s
VDSS 700 V
RDS(on) < 0.75 Ω
ID 10.6 A s s s
TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247
DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s...