STW11NM80 Datasheet | STMicroelectronics

STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS(on) max RDS(on)- Qg STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω- n C 11 A - Low input capacitance and gate charge - Low gate input resistance - Best RDS(on)- Qg in the industry Applications - Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the pany's Power MESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. 3 1 D²PAK 3 2 1 TO-220FP I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram $ '...