STW22NM60 Datasheet | STMicroelectronics

DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall performances that are significantly better than that of similar petition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 MARKING P22NM60 F22NM60 B22NM60T4 B22NM60-1 W22NM60 PACKAGE TO-220 TO-220FP D²PAK I²PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE TUBE June 2003 1/11 STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP22NM60 STB22NM60/1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -22 12.6 80 192 1.2 Value STF22NM60 600 600 ±30 22 (- ) 12.6 (- ) 80(- ) 45 0.36 15 2500 - 65 to 150 150 -22 12.6 80 210 1.2 STW22NM60 V V V A A A W W/°C V/ns V °C °C Unit ( ) Pulse width limited by safe operating area; (1) ISD ≤22A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (- )Limited only by maximum temperature allowed THERMAL DATA TO-220/D2PAK/I2PAK/TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.65 62.5 300 TO-220FP 2.8 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche...