STW38NB20 Description
te Using the latest high voltage MESH OVERLAY™ le process, STMicroelectronics has designed an ado vanced family of power MOSFETs with outstands ing performances. The new patent pending strip b layout coupled with the pany’s proprietary O edge termination structure, gives the lowest - RDS(on) per area, exceptional avalanche and dv/ ) dt capabilities and unrivalled gate charge and t(s switching characteristics....
STW38NB20 Key Features
- TYPICAL RDS(on) = 0.052 Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- ± 30V GATE TO SOURCE VOLTAGE RATING
- 100% AVALANCHE TESTED c
- LOW INTRINSIC CAPACITANCE u
- GATE CHARGE MINIMIZED rod
- REDUCED VOLTAGE SPREAD
- RDS(on) per area, exceptional avalanche and dv/ ) dt capabilities and unrivalled gate charge and t(s switching character