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STW43NM60N - N-channel Power MOSFETs

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STW43NM60N.
  • VDSS (@Tjmax) 650 V RDS(on) max.

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STW43NM60N www.datasheet4u.com N-channel 600V - 0.075Ω - 35A - TO-247 second generation MDmesh™ Power MOSFET Preliminary Data Features Type STW43NM60N ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) max <0.095 Ω ID 35 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1.