Datasheet Summary
..
®
- CHANNEL 200V
- 0.047Ω
- 50A
- TO-247 PowerMESH™ MOSFET
TYPE STW 50NB20 s s s s s s
V DSS 200 V
R DS(on) < 0.055 Ω
ID 50 A
TYPICAL RDS(on) = 0.047 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2
1 DESCRIPTION Using the latest high voltage technology, STMicroelectronics has designed an advanced TO-247 family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and INTERNAL SCHEMATIC DIAGRAM dv/dt...