| Part number | STW5NB100 |
|---|---|
| Datasheet | STW5NB100_STMicroelectronics.pdf |
| File Size | 215.99 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL MOSFET |
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TO-247 Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and INTERNAL SCHEMATIC DIAGRAM . dv/dt capabilities and unrivalled gate charge and switching characteristics.
See all STMicroelectronics datasheets
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