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STX690A - Transistors

General Description

The device is manufactured in low voltage NPN planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Table 1.

Key Features

  • Very low collector to emitter saturation voltage DC current gain, hFE > 100 3 A continuous collector current 40 V breakdown voltage V(BR)CER.

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www.DataSheet4U.com STX690A High performance low voltage NPN transistor Features ■ ■ ■ ■ Very low collector to emitter saturation voltage DC current gain, hFE > 100 3 A continuous collector current 40 V breakdown voltage V(BR)CER Applications ■ ■ ■ ■ Power management in portable equipment Voltage regulation in bias supply circuits Switching regulator in battery charger applications Heavy load driver TO-92 TO-92AP Figure 1. Internal schematic diagram Description The device is manufactured in low voltage NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1.