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TIP122-A - Transistors

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • The devices are qualified for automotive.

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Other Datasheets by STMicroelectronics

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www.DataSheet4U.com TIP122-A TIP127-A Complementary power Darlington transistors Features ■ ■ ■ The devices are qualified for automotive application Low collector-emitter saturation voltage Complementary NPN - PNP transistors 3 1 2 Application ■ General purpose linear and switching TO-220 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 16 kΩ R2 = 60 Ω Table 1. Device summary Marking TIP122 TIP127 Polarity NPN TO-220 Tube PNP Package Packaging Order codes TIP122-A TIP127-A July 2009 Doc ID 15983 Rev 1 1/12 www.st.