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STW14NB50
N-CHANNEL 500V - 0.40 Ω - 14A - TO-247 PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE STW14NB50
s s s s
V DSS 500 V
R DS(on) < 0.45 Ω
ID 14 A
TYPICAL RDS(on) = 0.40 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED
3 2 1
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
W14NB50 Datasheet
