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W15NB50 - STW15NB50

General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

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ST W15NB50 ST H15NB50FI www.DataSheet4U.com s s s s s s w w at .D w h S a ® ee U 4 t m o .c STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH™ MOSFET V DSS 500 V 500 V R DS(on) < 0.36 Ω < 0.36 Ω ID 14.6 A 10.5 A TYPE TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.