W20NM60 Datasheet | STMicroelectronics

ures Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A 20A 20A 20A - High dv/dt and avalanche capabilities - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products. Table 1. Device summary Part number STP20NM60 STP20NM60FP STB20NM60T4 STB20NM60-1 STW20NM60 Marking P20NM60 P20NM60FP B20NM60 B20NM60-1 W20NM60 3 1 D²PAK 3 2 1 TO-220 3 2 1 TO-220FP TO-247 I²PAK Figure 1. Internal schematic diagram Package TO-220 TO-220FP D²PAK I²PAK TO-247 Packaging Tube...