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STW8NB100
N - CHANNEL 1000V - 1.2Ω - 8A - TO-247 PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE STW8NB100
s s s s s s s
V DSS 1000 V
R DS(on) < 1.5 Ω
ID 8A
TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
W8NB100 Datasheet
