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STY34NB50
N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH™ MOSFET
TYPE ST Y34NB50
s s s s s s s
V DSS 500 V
R DS(on) < 0.13 Ω
ID 34 A
TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
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DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Y34NB50 Datasheet
