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ST18ADN - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

ST18ADN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Datasheet Details

Part number ST18ADN
Manufacturer STANSON
File Size 840.46 KB
Description N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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ST18ADN N Channel Enhancement Mode MOSFET 70A DESCRIPTION ST18ADN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION POWER PACK 5x6 (1212-8L) DD DD FEATURE l 30V/30A, RDS(ON) = 6mΩ（Typ.） @VGS = 10V l 30V/15A, RDS(ON) = 7mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 (1212-8L) package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp.
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