STN444DN Overview
STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PowerPAK 5x6L(1212-8) DD.
STN444DN Key Features
- 30V/30A, RDS(ON) = 2.6mΩ（Typ.） @VGS = 10V
- 30V/15A, RDS(ON) = 3.4mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- PowerPAK 5x6L(1212-8) package design S S SG Y：Year Code A：Date Code B：Package Code C：Wafer Code STANSON TECH
