• Part: STN444DN
  • Description: N-Channel Enhancement Mode MOSFET
  • Manufacturer: STANSON
  • Size: 803.65 KB
Download STN444DN Datasheet PDF
STANSON
STN444DN
STN444DN is N-Channel Enhancement Mode MOSFET manufactured by STANSON.
N Channel Enhancement Mode MOSFET 100A DESCRIPTION STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION PowerPAK 5x6L(1212-8) DD DD FEATURE l 30V/30A, RDS(ON) = 2.6mΩ(Typ.) @VGS = 10V l 30V/15A, RDS(ON) = 3.4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PowerPAK 5x6L(1212-8) package design S S SG Y:Year Code A:Date Code B:Package Code C:Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040...