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STN444DN - N-Channel Enhancement Mode MOSFET

General Description

STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Datasheet Details

Part number STN444DN
Manufacturer STANSON
File Size 803.65 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN444DN Datasheet

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STN444DN N Channel Enhancement Mode MOSFET 100A DESCRIPTION STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION PowerPAK 5x6L(1212-8) DD DD FEATURE l 30V/30A, RDS(ON) = 2.6mΩ(Typ.) @VGS = 10V l 30V/15A, RDS(ON) = 3.4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PowerPAK 5x6L(1212-8) package design S S SG Y:Year Code A:Date Code B:Package Code C:Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp.