STN4850 Datasheet | STANSON

N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE - 60V/7.2A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V - 60V/6.8A, RDS(ON) = 32mΩ @VGS = 4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - SOP-8 package...