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STP4189D - P-Channel Enhancement Mode MOSFET

General Description

STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number STP4189D
Manufacturer STANSON
File Size 567.21 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP4189D Datasheet

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STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) FEATURE TO-252 TO-251 -40V/-12.0A, RDS(ON) = 18mΩ (Typ.) @VGS = -10V -40V/-8.0A, RDS(ON) = 24mΩ @VGS =-4.