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STP4407 - P-Channel Enhancement Mode MOSFET

Description

The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP4407
Manufacturer STANSON
File Size 576.98 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP4407 Datasheet

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Full PDF Text Transcription

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STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE l -30V/-10A, RDS(ON) = 15mΩ @VGS = -10V l -30V/-6.0A, RDS(ON) = 24mΩ @VGS = -4.
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