STP4407 Datasheet | STANSON

P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other batter powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE l- -30V/-10A, RDS(ON) = 15mΩ @VGS = -10V l- -30V/-6.0A, RDS(ON) = 24mΩ @VGS = -4.5V l- Super high density cell design for extremely low RDS(ON) l- Exceptional on-resistance and maximum DC...