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STP607 - P-Channel Enhancement Mode MOSFET

General Description

STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number STP607
Manufacturer STANSON
File Size 849.52 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP607 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP607 P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP601 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE -60V/-10.0A, RDS(ON) = 150mΩ @VGS = -10V -60V/-10.0A, RDS(ON) = 185mΩ @VGS = -4.