STP9235 Datasheet PDF

STANSON STP9235

STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

Part No.	STP9235
Datasheet	STP9235 Download
Manufacturer	STANSON
Description	P-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE -25V/-7.5A, RDS(ON) = 45mΩ @VGS = -10V -25V/-6.0A, RDS(ON) = 55mΩ @VGS = -6.0V -25V/-5.4A, RDS(ON) = 65mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STP9235 2009. V1 STP9235 P Channel Enhancement Mode MOSFET - 7.5A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS -25 Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM ±20 -8.0 -6.0 -30 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ -2.3 2.8 1.6 -55/150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.