STP9435 Datasheet PDF

STANSON STP9435

STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, notebook computer power management, and other battery powered circuits.

Part No.	STP9435
Datasheet	STP9435 Download
Manufacturer	STANSON
Description	P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE -30V/-5.6A, RDS(ON) = 60mΩ @VGS = -10V -30V/-5.0A, RDS(ON) = 77mΩ @VGS = -6.0V -30V/-4.4A, RDS(ON) = 100mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STP9435 2007. V1 STP9435 P Channel Enhancement Mode MOSFET - 5.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -30 ±20 -6.0 -4.1 -26 -2.3 2.5 1.6 150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.

STP9435 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
STP9435	Semtron