DG120X07T2 Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
DG120X07T2 Key Features
- Low VCE(sat) Trench IGBT technology
- Low switching loss
- Maximum junction temperature 175oC
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
- Lead free package