DG140A12TCFS - IGBT

Datasheet Summary

Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as solar power.

Features

Low VCE(sat) Fast IGBT technology.
Low switching loss.
Maximum junction temperature 175oC.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD Typical.

STARPOWER

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Datasheet Details

Part number	DG140A12TCFS
Manufacturer	STARPOWER
File Size	559.84 KB
Description	IGBT
Datasheet	DG140A12TCFS Datasheet
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DG140A12TCFS DOSEMI DG140A12TCFS 1200V/140A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power. Features  Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD Typical Applications  Solar power  UPS  3-level-application Equivalent Circuit Schematic IGBT Discrete IGBT ©2023 STARPOWER Semiconductor Ltd.

Published: Jun 17, 2025 |