DG140A12TCFS Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power.
DG140A12TCFS Key Features
- Low VCE(sat) Fast IGBT technology
- Low switching loss
- Maximum junction temperature 175oC
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD