DG140A12TCFS
Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Features
- Low VCE(sat) Fast IGBT technology
- Low switching loss
- Maximum junction temperature 175o C
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
Typical Applications
- Solar power
- UPS
- 3-level-application
Equivalent Circuit Schematic
IGBT Discrete
IGBT
©2023 STARPOWER Semiconductor Ltd.
12/15/2023
1/12 B01
IGBT Discrete
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
Pulsed Collector Current tp limited by Tvjmax Maximum Power Dissipation @ Tvj=175o C
Diode
Symbol VRRM
Description
Repetitive Peak Reverse Voltage Diode Continuous Forward Current @ TC=25o C
@ TC=100o C Diode Maximum Forward Current tp...
