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DG15X12T2 - IGBT

General Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • Low switching loss.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • VCE(sat) with positive temperature coefficient.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Lead free package Typical.

📥 Download Datasheet

Datasheet Details

Part number DG15X12T2
Manufacturer STARPOWER
File Size 532.87 KB
Description IGBT
Datasheet download datasheet DG15X12T2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DG15X12T2 DOSEMI DG15X12T2 1200V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  Maximum junction temperature 175oC  Low inductance case  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2020 STARPOWER Semiconductor Ltd.