DG160X07T2 - IGBT

STARPOWER

General Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Key Features

Low VCE(sat) Trench IGBT technology.
Low switching loss.
Maximum junction temperature 175oC.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD Typical.

📥 Download Datasheet

DG160X07T2 igbt by STARPOWER - Datasheet Preview

Datasheet Details

Part number	DG160X07T2
Manufacturer	STARPOWER
File Size	560.79 KB
Description	IGBT
Datasheet	DG160X07T2 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DG16032	160 x 32 dots Display Module	OPTO Logic
DG16080	GRAPHIC LCD MODULE	ETC
DG1	MINIATURE CLAMPER / DAMPER GLASS PASSIVATED JUNCTION RECTIFIER	General
DG1	Standard Sinterglass Diode	Vishay Siliconix
DG1	CLAMPER/DAMPER RECTIFIER	Frontier Electronics

Other Datasheets by STARPOWER

Part Number	Description
DG120X07T2	IGBT
DG140A12TCFS	IGBT
DG15X12T2	IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DG160X07T2 DOSEMI DG160X07T2 650V/160A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2022 STARPOWER Semiconductor Ltd.