DG160X07T2 - IGBT

Datasheet Summary

Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Features

Low VCE(sat) Trench IGBT technology.
Low switching loss.
Maximum junction temperature 175oC.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD Typical.

STARPOWER

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Datasheet Details

Part number	DG160X07T2
Manufacturer	STARPOWER
File Size	560.79 KB
Description	IGBT
Datasheet	DG160X07T2 Datasheet
Additional preview pages of the DG160X07T2 datasheet.

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DG160X07T2 DOSEMI DG160X07T2 650V/160A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2022 STARPOWER Semiconductor Ltd.

Published: Jul 13, 2025 |