DG160X07T2
Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching loss
- Maximum junction temperature 175o C
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Equivalent Circuit Schematic
IGBT Discrete
IGBT
©2022 STARPOWER Semiconductor Ltd.
5/20/2022
1/12
A01
IGBT Discrete
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
IC ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Transient Gate-Emitter Voltage Collector Current Value limited by bondwire
@ TC=25o C @ TC=100o C
Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175o C
Value
Unit
±20...
