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DG20X06T2 - IGBT

General Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Key Features

  • Low VCE(sat) Fast IGBT technology.
  • Low switching loss.
  • Maximum junction temperature 175oC.
  • VCE(sat) with positive temperature coefficient.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Lead free package Typical.

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Datasheet Details

Part number DG20X06T2
Manufacturer STARPOWER
File Size 671.27 KB
Description IGBT
Datasheet download datasheet DG20X06T2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DG20X06T2 DOSEMI DG20X06T2 600V/20A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2021 STARPOWER Semiconductor Ltd.