DG50F12T3 Overview
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
DG50F12T3 Key Features
- Low VCE(sat) Fast IGBT technology
- 10μs short circuit capability
- Low switching loss
- Maximum junction temperature 175oC
- Low inductance case
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
- Lead free package