DG50Q12T2 - IGBT

Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as Solar Power and UPS.

Features

Low VCE(sat) Trench IGBT technology.
10μs short circuit capability.
Low switching loss.
Maximum junction temperature 175oC.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD.
Lead free package Typical.

STARPOWER

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Datasheet Details

Part number	DG50Q12T2
Manufacturer	STARPOWER
File Size	479.36 KB
Description	IGBT
Datasheet	DG50Q12T2 Datasheet
Additional preview pages of the DG50Q12T2 datasheet.

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Full PDF Text Transcription

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DG50Q12T2 DOSEMI DG50Q12T2 1200V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as Solar Power and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Solar Power  Electronic welder  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2021 STARPOWER Semiconductor Ltd.

Published: Jun 17, 2025 |