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DG50X12T2 - IGBT

Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • Low switching loss.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • VCE(sat) with positive temperature coefficient.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Lead free package Typical.

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Datasheet preview – DG50X12T2

Datasheet Details

Part number DG50X12T2
Manufacturer STARPOWER
File Size 523.12 KB
Description IGBT
Datasheet download datasheet DG50X12T2 Datasheet
Additional preview pages of the DG50X12T2 datasheet.

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Full PDF Text Transcription

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DG50X12T2 DOSEMI DG50X12T2 1200V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  Maximum junction temperature 175oC  Low inductance case  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2020 STARPOWER Semiconductor Ltd.
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