DG50X12T2 Overview
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
DG50X12T2 Key Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- Low switching loss
- Maximum junction temperature 175oC
- Low inductance case
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
- Lead free package