DG75X12T2 - IGBT

Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Features

Low VCE(sat) Trench IGBT technology.
Low switching loss.
Maximum junction temperature 175oC.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD.
Lead free package Typical.

STARPOWER

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Datasheet Details

Part number	DG75X12T2
Manufacturer	STARPOWER
File Size	232.48 KB
Description	IGBT
Datasheet	DG75X12T2 Datasheet
Additional preview pages of the DG75X12T2 datasheet.

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Full PDF Text Transcription

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DG75X12T2 DOSEMI DG75X12T2 1200V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2020 STARPOWER Semiconductor Ltd.

Published: Jun 15, 2025 |