DM140S08TDRB
Description
DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
Features
- Si C power MOSFET
- Low RDS(on)
- Chip sintering technology
- Low inductance case avoid oscillations
- ROHS
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
Si C MOSFET Discrete
Si C MOSFET
©2025 STARPOWER Semiconductor Ltd.
5/15/2025
1/9
B01
Si C MOSFET Discrete
Absolute Maximum Ratings TC=25o C unless otherwise noted
Mosfet
Symbol VDSS VGSSmax VGSSop ID PD
Description
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage Drain Current @ Tvj=175o C Maximum Power Dissipation @ Tvj=175o C
Value
Unit
-8/+19
-4/+15
Body Diode
Symbol
Description
Source Current@ Tvj=175o...
