DM140S08TDRB - SiC MOSFET

STARPOWER

General Description

DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as hybrid and electric vehicle.

Key Features

SiC power MOSFET.
Low RDS(on).
Chip sintering technology.
Low inductance case avoid oscillations.
ROHS Typical.

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DM140S08TDRB sic mosfet by STARPOWER - Datasheet Preview

Datasheet Details

Part number	DM140S08TDRB
Manufacturer	STARPOWER
File Size	390.02 KB
Description	SiC MOSFET
Datasheet	DM140S08TDRB Datasheet

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DM140S08TDRB DOSEMI DM140S08TDRB 750V/13.5mΩ SiC Mosfet without Diode General Description DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  Low RDS(on)  Chip sintering technology  Low inductance case avoid oscillations  ROHS Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic SiC MOSFET Discrete SiC MOSFET ©2025 STARPOWER Semiconductor Ltd.