STARPOWER DM170S12TDRB
SiC MOSFET
| Part No. | DM170S12TDRB |
|---|---|
| Datasheet | DM170S12TDRB Download |
| Manufacturer |  STARPOWER |
| Description | SiC MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.FEATURES
● SiC power MOSFET● Low RDS(on)
● Chip sintering technology
● Low inductance case avoid oscillations
● ROHS Typical
APPLICATIONS
● Automotive application● Hybrid and electric vehicle
● Inverter for motor drive Equivalent Circuit Schematic SiC MOSFET Discrete SiC MOSFET ©2024 STARPOWER Semiconductor Ltd. 8/28/2024 1/9 B02 DM170S12TDRB SiC MOSFET Discrete
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted Mosfet Symbol VDSS VGSSmax VGSSop ID PDDESCRIPTION
Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage Drain Current @ Tvj=175oC Maximum Power Dissipation @ Tvj=175oC Value Unit 1200 V -8/+19 V -4/+15 V 118 A 355 W Body Diode SymbolDESCRIPTION
IF Source Current@ Tvj=175oC Value Unit 157 A Discrete SymbolDESCRIPTION
Values Unit Tjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC ©2024 STARPOWER Semiconductor Ltd.
