DM170S12TDRB - SiC MOSFET

Datasheet Summary

Description

DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as hybrid and electric vehicle.

Features

SiC power MOSFET.
Low RDS(on).
Chip sintering technology.
Low inductance case avoid oscillations.
ROHS Typical.

STARPOWER

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Datasheet Details

Part number	DM170S12TDRB
Manufacturer	STARPOWER
File Size	728.45 KB
Description	SiC MOSFET
Datasheet	DM170S12TDRB Datasheet
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DM170S12TDRB DOSEMI DM170S12TDRB 1200V/17mΩ SIC Mosfet without Diode General Description DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  Low RDS(on)  Chip sintering technology  Low inductance case avoid oscillations  ROHS Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic SiC MOSFET Discrete SiC MOSFET ©2024 STARPOWER Semiconductor Ltd.

Published: Jun 20, 2025 |