GD100FFX65C5S - IGBT

STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Key Features

Low VCE(sat) Trench IGBT technology.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

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GD100FFX65C5S igbt by STARPOWER - Datasheet Preview

Datasheet Details

Part number	GD100FFX65C5S
Manufacturer	STARPOWER
File Size	239.60 KB
Description	IGBT
Datasheet	GD100FFX65C5S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GD100FFX65C5S STARPOWER SEMICONDUCTOR GD100FFX65C5S 650V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2018 STARPOWER Semiconductor Ltd.