GD100FTX120C6SA
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS.
Features
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Low switching loss
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Inverter for motor drive
- Uninterruptible power supply
- Solar power
Equivalent Circuit Schematic
IGBT Module
IGBT
©2023 STARPOWER Semiconductor Ltd.
12/5/2023
1/15
B01
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
T1~T6 IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175o C
D1~D6 Diode
Symbol VRRM IF IFM
Description
Repetitive Peak...
