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GD100HFQ120C1SD - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as electronic welder and inductive heating.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD100HFQ120C1SD

Datasheet Details

Part number GD100HFQ120C1SD
Manufacturer STARPOWER
File Size 424.83 KB
Description IGBT
Datasheet download datasheet GD100HFQ120C1SD Datasheet
Additional preview pages of the GD100HFQ120C1SD datasheet.

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Full PDF Text Transcription

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GD100HFQ120C1SD STARPOWER SEMICONDUCTOR GD100HFQ120C1SD 1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Switching mode power supply  Inductive heating  Electronic welder Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd.
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