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GD100HFY120C8S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching loss.
  • 10μs short circuit capability.
  • Low inductance case.
  • VCE(sat) with positive temperature coefficient.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD100HFY120C8S

Datasheet Details

Part number GD100HFY120C8S
Manufacturer STARPOWER
File Size 227.51 KB
Description IGBT
Datasheet download datasheet GD100HFY120C8S Datasheet
Additional preview pages of the GD100HFY120C8S datasheet.

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Full PDF Text Transcription

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GD100HFY120C8S STARPOWER SEMICONDUCTOR GD100HFY120C8S 1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs short circuit capability  Low inductance case  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2015 STARPOWER Semiconductor Ltd.
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