GD100MLX65L3S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-application.

Features

Low VCE(sat) Trench IGBT technology.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175 oC.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD100MLX65L3S
Manufacturer	STARPOWER
File Size	539.10 KB
Description	IGBT
Datasheet	GD100MLX65L3S Datasheet
Additional preview pages of the GD100MLX65L3S datasheet.

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Full PDF Text Transcription

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GD100MLX65L3S STARPOWER SEMICONDUCTOR GD100MLX65L3S 650V/100A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175 oC  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Solar power  UPS  3-level-application IGBT Module IGBT Equivalent Circuit Schematic ©2020 STARPOWER Semiconductor Ltd.

Published: Jun 17, 2025 |