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GD100MLX65L3S Datasheet IGBT

Manufacturer: STARPOWER

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General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-application.

Overview

GD100MLX65L3S STARPOWER SEMICONDUCTOR GD100MLX65L3S 650V/100A 3-level in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175 oC.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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