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GD10PUX65F1S_B22 Datasheet IGBT

Manufacturer: STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Overview

GD10PUX65F1S_B22 STARPOWER SEMICONDUCTOR GD10PUX65F1S_B22 650V/10A in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • Pre-applied phase change material Typical.