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GD10PWX65F1S_B22 - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • Pre-applied phase change material Typical.

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Datasheet preview – GD10PWX65F1S_B22

Datasheet Details

Part number GD10PWX65F1S_B22
Manufacturer STARPOWER
File Size 237.38 KB
Description IGBT
Datasheet download datasheet GD10PWX65F1S_B22 Datasheet
Additional preview pages of the GD10PWX65F1S_B22 datasheet.

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Full PDF Text Transcription

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GD10PWX65F1S_B22 STARPOWER SEMICONDUCTOR GD10PWX65F1S_B22 650V/10A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology  Pre-applied phase change material Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2018 STARPOWER Semiconductor Ltd.
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