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GD1100HFA120C6SF - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverter and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper pinfin baseplate using AMB technology.
  • PressFIT contact technology Typical.

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Datasheet preview – GD1100HFA120C6SF

Datasheet Details

Part number GD1100HFA120C6SF
Manufacturer STARPOWER
File Size 451.70 KB
Description IGBT
Datasheet download datasheet GD1100HFA120C6SF Datasheet
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Full PDF Text Transcription

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GD1100HFA120C6SF STARPOWER SEMICONDUCTOR GD1100HFA120C6SF 1200V/1100A 2 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features  Low VCE(sat) Trench IGBT technology  Short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using AMB technology  PressFIT contact technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic ©2025 STARPOWER Semiconductor Ltd.
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