GD150MLX65L3S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as 3-level-application.

Features

Low VCE(sat) Trench IGBT technology.
Low switching loss.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Fast & soft reverse recovery anti-parallel FWD.
Low inductance case Typical.

STARPOWER

📥 Download Datasheet

Datasheet Details

Part number	GD150MLX65L3S
Manufacturer	STARPOWER
File Size	577.00 KB
Description	IGBT
Datasheet	GD150MLX65L3S Datasheet
Additional preview pages of the GD150MLX65L3S datasheet.

📁 Similar Datasheet

GD150A - Voltage Stabilizer (Ericsson)
GD150S - Voltage Stabilizer (Ericsson)
GD15MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD103SD - SWITCHING DIODE (GTM)
GD10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
GD10MPS12A - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12E - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD10NC60HD - very fast IGBT (STMicroelectronics)

Other Datasheets by STARPOWER

Full PDF Text Transcription

Click to expand full text

GD150MLX65L3S STARPOWER SEMICONDUCTOR GD150MLX65L3S 650V/150A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Fast & soft reverse recovery anti-parallel FWD  Low inductance case Typical Applications  Solar power  UPS  3-level-application IGBT Module IGBT Equivalent Circuit Schematic ©2020 STARPOWER Semiconductor Ltd.

Published: Jul 13, 2025 |